Plasma Etching Processes for CMOS Devices Realization

Book Plasma Etching Processes for CMOS Devices Realization Cover

Download or read online Plasma Etching Processes for CMOS Devices Realization PDF book by Nicolas Posseme in ePUB, PDF or Kindle eBooks. Published by Elsevier in 25 January 2017 the book become immediate popular and critical acclaim in Technology & Engineering books with total hardcover page 136. Click Download Book button to get book file. Read some info about this book below.

  • Author : Nicolas Posseme
  • Publisher : Elsevier
  • Release : 25 January 2017
  • ISBN : 9780081011966
  • Page : 136 pages
  • Language : English
  • Total View : 325 Views
  • File Size : 41,7 Mb

Plasma Etching Processes for CMOS Devices Realization Book PDF summary

Plasma etching has long enabled the perpetuation of Moore's Law. Today, etch compensation helps to create devices that are smaller than 20 nm. But, with the constant downscaling in device dimensions and the emergence of complex 3D structures (like FinFet, Nanowire and stacked nanowire at longer term) and sub 20 nm devices, plasma etching requirements have become more and more stringent. Now more than ever, plasma etch technology is used to push the limits of semiconductor device fabrication into the nanoelectronics age. This will require improvement in plasma technology (plasma sources, chamber design, etc.), new chemistries (etch gases, flows, interactions with substrates, etc.) as well as a compatibility with new patterning techniques such as multiple patterning, EUV lithography, Direct Self Assembly, ebeam lithography or nanoimprint lithography. This book presents these etch challenges and associated solutions encountered throughout the years for transistor realization. Helps readers discover the master technology used to pattern complex structures involving various materials Explores the capabilities of cold plasmas to generate well controlled etched profiles and high etch selectivities between materials Teaches users how etch compensation helps to create devices that are smaller than 20 nm

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